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MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
PRELIMINARY
Some of contents are subject to change without notice. DESCRIPTION
The MH8S72BALD is 8388608 - word x 72-bit Synchronous DRAM module. This consist of nine industry standard 8M x 8 Synchronous DRAMs in TSOP. The TSOP on a card edge dual in-line package provides any application where high densities and large of quantities memory are required. This is a socket-type memory module ,suitable for easy interchange or addition of module.
85pin
1pin
FEATURES
Type name Max. Frequency Access Time from CLK [component level]
94pin 95pin
10pin 11pin
MH8S72BALD-6
133MHz
5.4ns (CL = 3)
Utilizes industry standard 8M X 8 Synchronous DRAMs in TSOP package Single 3.3V +/- 0.3V supply Max.Clock frequency 133MHz Fully synchronous operation referenced to clock rising edge 4-bank operation controlled by BA0,BA1(Bank Address) /CAS latency -2/3(programmable,at buffer mode) LVTTL Interface Burst length 1/2/4/8/Full Page(programmable) Burst type- Sequential and interleave burst (programmable) Random column access Burst Write / Single Write(programmable) Auto precharge / All bank precharge controlled by A10 Auto refresh and Self refresh 4096 refresh cycles every 64ms
124pin 125pin
40pin 41pin
APPLICATION
Main memory or graphic memory in computer systems
168pin
84pin
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
PIN NAME VSS DQ0 DQ1 DQ2 DQ3 VDD DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VDD DQ14 DQ15 CB0 CB1 VSS NC NC VDD /WE DQMB0 DQMB1 /S0 NC VSS A0 A2 A4 A6 A8 A10 BA1 VDD VDD CK0
PIN NO. 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84
PIN NAME VSS NC /S2 DQMB2 DQMB3 NC VDD NC NC CB2 CB3 VSS DQ16 DQ17 DQ18 DQ19 VDD DQ20 NC NC NC VSS DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 VDD DQ28 DQ29 DQ30 DQ31 VSS CK2 NC WP SDA SCL VDD
PIN NO. 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126
PIN NAME VSS DQ32 DQ33 DQ34 DQ35 VDD DQ36 DQ37 DQ38 DQ39 DQ40 VSS DQ41 DQ42 DQ43 DQ44 DQ45 VDD DQ46 DQ47 CB4 CB5 VSS NC NC VDD /CAS DQMB4 DQMB5 NC /RAS VSS A1 A3 A5 A7 A9 BA0 A11 VDD CK1 NC
PIN NO. 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168
PIN NAME VSS CKE0 NC DQMB6 DQMB7 NC VDD NC NC CB6 CB7 VSS DQ48 DQ49 DQ50 DQ51 VDD DQ52 NC NC NC VSS DQ53 DQ54 DQ55 VSS DQ56 DQ57 DQ58 DQ59 VDD DQ60 DQ61 DQ62 DQ63 VSS CK3 NC SA0 SA1 SA2 VDD
NC = No Connection
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
/S0
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7
D2 D1
DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47
D6
D0
D5
SERIAL PD SCL WP 47K VDD VSS A0 A1 A2 SDA
SA0 SA1 SA2 D0-8 D0-8
/S2
DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
D3
D7
D4
D8
CKE0 A11-0,BA0-1 /RAS /CAS /WE
D0-8 D0-8 D0-8 D0-8 D0-8
DQM0 DQM 1 DQM 2 DQM 3 DQM 4 DQM 5 DQM 6 DQM 7
D0 D1,2 D3 D4 D5 D6 D7 D8
CK0 CK1 CK2 CK3
5DRAMs TERMINATION 4DRAMs+3.3pF TERMINATION
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
PIN FUNCTION
CK0,2 Input Master Clock:All other inputs are referenced to the rising edge of CK Clock Enable:CKE controls internal clock.When CKE is low,internal clock for the following cycle is ceased. CKE is also used to select auto / self refresh. After self refresh mode is started, CKE E becomes asynchronous input.Self refresh is maintained as long as CKE is low. Chip Select: When /S is high,any command means No Operation. Combination of /RAS,/CAS,/W defines basic commands. A0-11 specify the Row/Column Address in conjunction with BA.The Row Address is specified by A0-11.The Column Address is specified by A0-8.A10 is also used to indicate precharge option.When A10 is high at a read / write command, an auto precharge is performed. When A10 is high at a precharge command, both banks are precharged. Bank Address:BA0,1 is specifies the four bank to which a command is applied.BA must be set with ACT ,PRE ,READ ,WRITE commands
CKE0
Input
/S0,2 /RAS,/CAS,/W
Input Input
A0-11
Input
BA0-1 DQ0-63 CB0-7 DQM0-7 Vdd,Vss
Input
Data In and Data out are referenced to the rising edge Input/Output of CK Din Mask/Output Disable:When DQMB is high in burst write.Din for the current cycle is masked.When DQMB is high Input in burst read,Dout is disabled at the next but one cycle. Power Supply for the memory mounted Power Supply module.
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
BASIC FUNCTIONS
The MH8S72BALD provides basic functions,bank(row)activate,burst read / write, bank(row)precharge,and auto / self refresh. Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and precharge option,respectively. To know the detailed definition of commands please see the command truth table.
CK /S /RAS /CAS /WE CKE A10
Chip Select : L=select, H=deselect Command Command Command Refresh Option @refresh command Precharge Option @precharge or read/write command define basic commands
Activate(ACT) [/RAS =L, /CAS = /WE =H] ACT command activates a row in an idle bank indicated by BA. Read(READ) [/RAS =H,/CAS =L, /WE =H] READ command starts burst read from the active bank indicated by BA.First output data appears after /CAS latency. When A10 =H at this command,the bank is deactivated after the burst read(auto-precharge,READA). Write(WRITE) [/RAS =H, /CAS = /WE =L] WRITE command starts burst write to the active bank indicated by BA. Total data length to be written is set by burst length. When A10 =H at this command, the bank is deactivated after the burst write(auto-precharge,WRITEA). Precharge(PRE) [/RAS =L, /CAS =H,/WE =L] PRE command deactivates the active bank indicated by BA. This command also terminates burst read / write operation. When A10 =H at this command, both banks are deactivated(precharge all, PREA). Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H] PEFA command starts auto-refresh cycle. Refresh address including bank address are generated internally. After this command, the banks are precharged automatically.
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
COMMAND TRUTH TABLE
COMMAND Deselect No Operation Row Adress Entry & Bank Activate Single Bank Precharge Precharge All Bank Column Address Entry & Write Column Address Entry & Write with AutoPrecharge Column Address Entry & Read Column Address Entry & Read with Auto Precharge Auto-Refresh Self-Refresh Entry Self-Refresh Exit Burst Terminate Mode Register Set MNEMONIC DESEL NOP CKE CKE n-1 n H X H X /S H L /RAS /CAS X H X H /WE BA0,1 X H X X A11 X X A10 X X A0-9 X X
ACT PRE PREA WRITE
H H H H
X X X X
L L L L
L L L H
H H H L
H L L L
V V X V
V X X X
V L H L
V X X V
WRITEA
H
X
L
H
L
L
V
X
H
V
READ
H
X
L
H
L
H
V
X
L
V
READA REFA REFS REFSX TBST MRS
H H H L L H H
X H L H H X X
L L L H L L L
H L L X H H L
L L L X H H L
H H H X H L L
V X X X X X L
X X X X X X L
H X X X X X L
V X X X X X V*1
H =High Level, L = Low Level, V = Valid, X = Don't Care, n = CK cycle number NOTE: 1.A7-9 = 0, A0-6 = Mode Address
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE
Current State IDLE /S H L L L L L L L ROW ACTIVE H L L L L L L L L READ H L L L /RAS /CAS X H H H L L L L X H H H H L L L L X H H H X H H L H H L L X H H L L H H L L X H H L /WE X H L X H L H L X H L H L H L H L X H L H X X BA BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add X X BA BA,CA,A10 BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add X X BA BA,CA,A10 Address Command DESEL NOP TBST ACT PRE/PREA REFA MRS DESEL NOP TBST READ/READA WRITE/ WRITEA ACT PRE/PREA REFA MRS DESEL NOP TBST NOP NOP ILLEGAL*2 Bank Active,Latch RA NOP*4 Auto-Refresh*5 Mode Register Set*5 NOP NOP NOP Begin Read,Latch CA, Determine Auto-Precharge Begin Write,Latch CA, Determine Auto-Precharge Bank Active/ILLEGAL*2 Precharge/Precharge All ILLEGAL ILLEGAL NOP(Continue Burst to END) NOP(Continue Burst to END) Terminate Burst Terminate Burst,Latch CA, READ/READA Begin New Read,Determine Auto-Precharge*3 Terminate Burst,Latch CA, L L L L L H L L L L L H H L L L H L H L BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add WRITE/WRITEA Begin Write,Determine AutoPrecharge*3 ACT PRE/PREA REFA MRS Bank Active/ILLEGAL*2 Terminate Burst,Precharge ILLEGAL ILLEGAL Action
READ/WRITE ILLEGAL*2
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE(continued)
Current State WRITE /S H L L L /RAS X H H H /CAS X H H L /WE X H L H X X BA BA,CA,A10 Address Command DESEL NOP TBST Action NOP(Continue Burst to END) NOP(Continue Burst to END) Terminate Burst Terminate Burst,Latch CA, READ/READA Begin Read,Determine AutoPrecharge*3 L L L L L READ with AUTO PRECHARGE H L L L L L L L L WRITE with AUTO PRECHARGE H L L L L L L L L H L L L L X H H H H L L L L X H H H H L L L L L H H L L X H H L L H H L L X H H L L H H L L L H L H L X H L H L H L H L X H L H L H L H L BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add X X BA BA,CA,A10 BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add X X BA BA,CA,A10 BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add WRITE/ WRITEA ACT PRE/PREA REFA MRS DESEL NOP TBST WRITE/ WRITEA ACT PRE/PREA REFA MRS DESEL NOP TBST WRITE/ WRITEA ACT PRE/PREA REFA MRS Terminate Burst,Latch CA, Begin Write,Determine AutoPrecharge*3 Bank Active/ILLEGAL*2 Terminate Burst,Precharge ILLEGAL ILLEGAL NOP(Continue Burst to END) NOP(Continue Burst to END) ILLEGAL
READ/READA ILLEGAL ILLEGAL Bank Active/ILLEGAL*2 ILLEGAL*2 ILLEGAL ILLEGAL NOP(Continue Burst to END) NOP(Continue Burst to END) ILLEGAL
READ/READA ILLEGAL ILLEGAL Bank Active/ILLEGAL*2 ILLEGAL*2 ILLEGAL ILLEGAL
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE(continued)
Current State PRE CHARGING /S H L L L L L L L ROW ACTIVATING H L L L L L L L WRITE RECOVERING H L L L L L L L /RAS /CAS X H H H L L L L X H H H L L L L X H H H L L L L X H H L H H L L X H H L H H L L X H H L H H L L /WE X H L X H L H L X H L X H L H L X H L X H L H L X X BA BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add X X BA BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add X X BA BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add MRS ILLEGAL Address Command DESEL NOP TBST ACT PRE/PREA REFA MRS DESEL NOP TBST ACT PRE/PREA REFA MRS DESEL NOP TBST Action NOP(Idle after tRP) NOP(Idle after tRP) ILLEGAL*2 ILLEGAL*2 NOP*4(Idle after tRP) ILLEGAL ILLEGAL NOP(Row Active after tRCD NOP(Row Active after tRCD ILLEGAL*2 ILLEGAL*2 ILLEGAL*2 ILLEGAL ILLEGAL NOP NOP ILLEGAL*2
READ/WRITE ILLEGAL*2
READ/WRITE ILLEGAL*2
READ/WRITE ILLEGAL*2 ACT PRE/PREA REFA ILLEGAL*2 ILLEGAL*2 ILLEGAL
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE(continued)
Current State REFRESHING /S H L L L L L L L MODE REGISTER SETTING H L L L L L L L /RAS /CAS X H H H L L L L X H H H L L L L X H H L H H L L X H H L H H L L /WE X H L X H L H L X H L X H L H L X X BA BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add X X BA BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add Address Command DESEL NOP TBST Action NOP(Idle after tRC) NOP(Idle after tRC) ILLEGAL
READ/WRITE ILLEGAL ACT PRE/PREA REFA MRS DESEL NOP TBST ILLEGAL ILLEGAL ILLEGAL ILLEGAL NOP(Idle after tRSC) NOP(Idle after tRSC) ILLEGAL
READ/WRITE ILLEGAL ACT PRE/PREA REFA MRS ILLEGAL ILLEGAL ILLEGAL ILLEGAL
ABBREVIATIONS: H = Hige Level, L = Low Level, X = Don't Care BA = Bank Address, RA = Row Address, CA = Column Address, NOP = No Operation NOTES: 1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle. 2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the state of that bank. 3. Must satisfy bus contention, bus turn around, write recovery requirements. 4. NOP to bank precharging or in idle state.May precharge bank indicated by BA. 5. ILLEGAL if any bank is not idle. ILLEGAL = Device operation and / or date-integrity are not guaranteed.
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE FOR CKE
Current State SELF REFRESH*1 CKE CKE n-1 n H L L L L L L POWER DOWN H L L ALL BANKS IDLE*2 H H H H H H H L ANY STATE other than listed above H H L L X H H H H H L X H L H L L L L L L X H L H L /S X H L L L L X X X X X L H L L L L X X X X X /RAS X X H H H L X X X X X L X H H H L X X X X X /CAS X X H H L X X X X X X L X H H L X X X X X X /WE X X H L X X X X X X X H X H L X X X X X X X Add X X X X X X X X X X X X X X X X X X X X X X INVALID Exit Self-Refresh(Idle after tRC) Exit Self-Refresh(Idle after tRC) ILLEGAL ILLEGAL ILLEGAL NOP(Maintain Self-Refresh) INVALID Exit Power Down to Idle NOP(Maintain Self-Refresh) Refer to Function Truth Table Enter Self-Refresh Enter Power Down Enter Power Down ILLEGAL ILLEGAL ILLEGAL Refer to Current State = Power Down Refer to Function Truth Table Begin CK0 Suspend at Next Cycle*3 Exit CK0 Suspend at Next Cycle*3 Maintain CK0 Suspend Action
ABBREVIATIONS: H = High Level, L = Low Level, X = Don't Care NOTES: 1. CKE Low to High transition will re-enable CK and other inputs asynchronously. A minimum setup time must be satisfied before any command other than EXIT. 2. Power-Down and Self-Refresh can be entered only form the All banks idle State. 3. Must be legal command.
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
POWER ON SEQUENCE
Before starting normal operation, the following power on sequence is necessary to prevent a SDRAM from damaged or malfunctioning. 1. Clock will be applied at power up along with power. Attempt to maintain CKE high, DQMB high and NOP condition at the inputs along with power. 2. Maintain stable power, stable cock, and NOP input conditions for a minimum of 200s. 3. Issue precharge commands for all banks. (PRE or PREA) 4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands. 5. Issue a mode register set command to initialize the mode register. After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
Burst Length, Burst Type and /CAS Latency can be programmed by setting the mode register(MRS). The mode register stores these date until the next MRS command, which may be issue when both banks are in idle state. After tRSC from a MRS command, the SDRAM is ready for new command.
CK /S BA0 BA1 A11 A10 A9 0 0 0 0 WM A8 0 A7 0 A6 A5 A4 A3 A2 A1 A0 /RAS /CAS LTMODE BT BL /WE BA0,1 A11-0 BL 000 001 010 011 100 101 110 111 BURST TYPE 0 1 BT= 0 1 2 4 8 R R R FP SEQUENTIAL INTERLEAVED
V
BT= 1 1 2 4 8 R R R R
CL 000 001 LATENCY MODE 010 011 100 101 110 111 0 1
/CAS LATENCY R R 2 3 R R R R BURST SINGLE BIT BURST LENGTH
WRITE MODE
R:Reserved for Future Use FP: Full Page
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CK Command Address DQ CL= 3 BL= 4
Read Y Q0 Q1 Q2 Q3 Write Y D0 D1 D2 D3
/CAS Latency
Burst Length
Burst Type
Burst Length
Initial Address A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 0 0 1 1 A0 0 1 0 1
BL Sequential 0 1 2 3 8 4 5 6 7 0 1 4 2 3 0 2 1 1 2 3 4 5 6 7 0 1 2 3 0 1 0 2 3 4 5 6 7 0 1 2 3 0 1 3 4 5 6 7 0 1 2 3 0 1 2 4 5 6 7 0 1 2 3 5 6 7 0 1 2 3 4
Column Addressing Interleaved 6 7 0 1 2 3 4 5 7 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 0 1 2 3 0 1 1 0 3 2 5 4 7 6 1 0 3 2 1 0 2 3 0 1 6 7 4 5 2 3 0 1 3 2 1 0 7 6 5 4 3 2 1 0 4 5 6 7 0 1 2 3 5 4 7 6 1 0 3 2 6 7 4 5 2 3 0 1 7 6 5 4 3 2 1 0
0 1 0 1 0 1 0 1 0 1
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol Vdd VI VO IO Pd Topr Tstg Parameter Supply Voltage Input Voltage Output Voltage Output Current Power Dissipation Operating Temperature Storage Temperature Ta=25C Condition with respect to Vss with respect to Vss with respect to Vss Ratings -0.5 ~ 4.6 -0.5 ~ 4.6 -0.5 ~ 4.6 50 9 0 ~ 70 -45 ~ 100 Unit V V V mA W C C
RECOMMENDED OPERATING CONDITION
(Ta=0 ~ 70C, unless otherwise noted) Limits Symbol Vdd Vss VIH*1 Parameter Supply Voltage Supply Voltage High-Level Input Voltage all inputs Min. 3.0 0 2.0 Typ. 3.3 0 Max. 3.6 0 Vdd+0.3 0.8 Unit V V V V
-0.3 VIL*2 Low-Level Input Voltage all inputs NOTES) 1. VIH(max)=Vdd+2.0V AC for pulse width less than 3ns acceptable. 2. VIL(min)= -2.0V for pulse width less than 3ns acceptable.
CAPACITANCE
(Ta=0 ~ 70C, Vdd = 3.3 +/- 0.3V, Vss = 0V, unless otherwise noted) Symbol CI(A) CI(C) CI(K) CI/O Parameter Input Capacitance, address pin Input Capacitance, control pin Input Capacitance, CK0 pin Input Capacitance, I/O pin 1Mhz 1.4V bias 200mV swing Test Condition Limits(max.) 49.2 49.2 32.5 16.5 Unit pF pF pF pF
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~70C, Vdd = 3.3 0.3V, Vss = 0V, unless otherwise noted)
Parameter
operating current single bank operation (discrete)
Symbol Icc1 Icc2N
Test Condition tRC=min.tCLK=min, BL=1, CL=3, IOL=0mA
CKE=VIHmin,tCLK=15ns
Limits (max) 1080 225 180 18 9 495 360 18 1 1305 1350 9
Unit Note mA *1 mA *1,2 mA *1 mA *1,2 mA *1 mA *1,2 mA *1 mA *1,2 mA *1 mA *1 mA *1 mA *1
precharge stanby current in Non power-down mode precharge stanby current in Power-down mode active stanby current in Non Power Down Mode active stanby current in Power Down Mode burst current auto-refresh current self-refresh current
Icc2NS CLK=VILmax, CKE=VIHmin (fixed) Icc2P CKE=VILmax,tCLK=15ns
Icc2PS CKE=CLK=VILmax (fixed) Icc3N
CKE= /CS=VIHmin,tCLK=15ns
Icc3NS CKE= /CS=VIHmin,CLK=VILmax (fixed) Icc3P
CKE=VILmax,tCLK=15ns
Icc3PS CKE= CLK=VILmax (fixed) Icc4 Icc5 Icc6
tCLK=min, BL=4, CL=3,IOL=0mA all banks active(discerte)
tRFC=min, tCLK=min CKE <0.2V
Note) 1.Icc(max) is specified at the output open condition. 2.Input single are changed one time during 30ns.
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70C, Vdd = 3.3 0.3V, Vss = 0V, unless otherwise noted)
Limits Symbol Parameter Test Condition IOH=-2mA IOL=2mA Q floating VO=0 ~ Vdd VIH=0 ~ Vdd+0.3V VOH(DC) High-Level Output Voltage(DC) VOL(DC) Low-Level Output Voltage(DC) IOZ Off-stare Output Current Ii Input Current Min. Max. 2.4 0.4 -10 10 -90 90 Unit V V uA uA
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
AC TIMING REQUIREMENTS
(Ta=0 ~ 70C, Vdd = 3.3 +/- 0.3V, Vss = 0V, unless otherwise noted) Input Pulse Levels: 0.8V to 2.0V Input Timing Measurement Level: 1.4V
Limits Symbol Parameter tCLK tCH tCL tT tIS tIH tRC tRFC tRCD tRAS tRP tWR tRRD tRSC tSRX tPDE tREF CK cycle time CK High pulse width CK Low pulse width Transition time of CK Input Setup time(all inputs) Input Hold time(all inputs) Row Cycle time Row Refresh Cycle time Row to Column Delay Row Active time Row Precharge time Write Recovery time Act to Act Deley time Mode Register Set Cycle time Self Refresh Exit time Power Down Exit time Refresh Interval time CL=3 CL=2 Min.
7.5 2.5 2.5 1 1.5 0.8 67.5 80 22.5 45 22.5 15 15 15 7.5 7.5
Max.
Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms
10
100K
64
CK
1.4V
Signal
1.4V
Any AC timing is referenced to the input signal crossing through 1.4V.
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MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
SWITCHING CHARACTERISTICS
(Ta=0 ~ 70C, Vdd = 3.3 +/- 0.3V, Vss = 0V, unless otherwise noted)
Symbol tAC tOH tOLZ tOHZ
Limits Parameter Access time from CK Output Hold time from CK Delay time, output low impedance from CK Delay time, output high impedance from CK CL=3 CL=2 2.7 0 2.7 5.4 Min. Max. 5.4
-
Unit
Note
ns ns ns ns *1
NOTE) 1.If clock rising time is longer than 1ns, (tr /2-0.5ns) should be added to the parameter. Output Load Condition
CK 1.4V
DQ VOUT Ext.CL=50pF Output Timing Measurement Reference Point
1.4V
CK
1.4V
DQ
tAC tOH
tOHZ
1.4V
MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
17
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Burst WRITE (single bank) BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK
tRC
/CS
tRAS tRP
/RAS
tRCD tRCD
/CAS /WE
tWR
CKE DQM
A0-9
X
Y
X
Y
A10 A11 BA0,1
X
X
X
X
0
0
0
0
0
DQ
D0
D0
D0
D0
D0
D0
D0
D0
ACT#0
WRITE#0
PRE#0
ACT#0
WRITE#0
Italic parameter indicates minimum case MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
18
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Burst WRITE (multi bank) BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK
tRC
/CS
tRRD tRRD
tRAS
tRP
/RAS
tRCD tRCD
/CAS /WE
tWR tWR
CKE DQM A0-9 A10 A11
X
X
Y
Y
X
X
Y
X
X
X
X
X
X
X
X
BA0,1
0
1
0
1
0
0
1
2
0
DQ
D0
D0
D0
D0
D1
D1
D1
D1
D0
D0
D0
D0
ACT#0
WRITE#0 ACT#1
PRE#0 WRITE#1
ACT#0
ACT#2 WRITE#0 PRE#1
Italic parameter indicates minimum case MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
19
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Burst READ (single bank) BL=4,CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK
tRC
/CS
tRAS tRP
/RAS
tRCD tRCD
/CAS /WE CKE DQM
DQM read latency =2
A0-9 A10 A11
X
Y
X
Y
X
X
X
X
BA0,1
0
0
0
0
0
CL=3
DQ
Q0
Q0
Q0
Q0
Q0
Q0
ACT#0
READ#0
PRE#0
ACT#0
READ#0
READ to PRE BL allows full data out
Italic parameter indicates minimum case MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
20
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Burst READ (multi bank) BL=4,CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK
tRC
/CS
tRRD tRAS tRP tRRD
/RAS
tRCD tRCD
/CAS /WE CKE
DQM
DQM read latency =2
A0-9 A10 A11 BA0,1
X
X
Y
Y
X
X
Y
X
X
X
X
X
X
X
X
0
1
0
1
0
0
1
2
0
CL=3
CL=3
Q0 Q0 Q0 Q0 Q1 Q1 Q1 Q1 Q0
DQ
ACT#0
READ#0 ACT#1
PRE#0 READ#1
ACT#0 PRE#1
READ#0 ACT#2
Italic parameter indicates minimum case MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
21
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Burst WRITE (multi bank) with AUTO-PRECHARGE BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK
tRC
/CS
tRRD tRRD
/RAS
tRCD tRCD tRCD
/CAS
BL-1+ tWR + tRP BL-1+ tWR + tRP
/WE CKE DQM A0-9 A10 A11
X
X
Y
Y
X
Y
X
Y
X
X
X
X
X
X
X
X
BA0,1
0
1
0
1
0
0
1
1
DQ
D0
D0
D0
D0
D1
D1
D1
D1
D0
D0
D0
D0
D1
ACT#0 ACT#1
WRITE#0 with AutoPrecharge
ACT#0 WRITE#1 with AutoPrecharge
WRITE#0 ACT#1 WRITE#1
Italic parameter indicates minimum case MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
22
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Burst READ (multi bank) with AUTO-PRECHARGE BL=4,CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK
tRC
/CS
tRRD tRRD
/RAS
tRCD tRCD tRCD
/CAS
BL+tRP BL+tRP
/WE CKE DQM
DQM read latency =2
A0-9 A10 A11
X
X
Y
Y
X
Y
X
Y
X
X
X
X
X
X
X
X
BA0,1
0
1
0
1
0
0
1
1
CL=3
CL=3
Q0 Q0 Q0 Q0 Q1 Q1 Q1 Q1
CL=3
Q0 Q0
DQ
ACT#0 ACT#1
READ#0 with Auto-Precharge
ACT#0 READ#1 with Auto-Precharge
READ#0 ACT#1
Italic parameter indicates minimum case MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
23
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Page Mode Burst Write (multi bank) BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRRD
/RAS
tRCD
/CAS /WE CKE DQM A0-9 A10 A11
X
X
Y
Y
Y
Y
X
X
X
X
BA0,1
0
1
0
0
1
0
DQ
D0
D0
D0
D0
D0
D0
D0
D0
D1
D1
D1
D1
D0
D0
D0
ACT#0
WRITE#0 ACT#1
WRITE#0 WRITE#1
WRITE#0
Italic parameter indicates minimum case MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
24
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Page Mode Burst Read (multi bank) BL=4,CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRRD
/RAS
tRCD
/CAS /WE CKE DQM
DQM read latency=2
A0-9 A10 A11
X
X
Y
Y
Y
Y
X
X
X
X
BA0,1
0
1
0
0
1
0
CL=3
CL=3
Q0 Q0 Q0 Q0 Q0 Q0
CL=3
Q0 Q0 Q1 Q1 Q1 Q1
DQ
ACT#0
READ#0 ACT#1
READ#0 READ#1
READ#0
Italic parameter indicates minimum case MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
25
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Write Interrupted by Write / Read BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRRD
/RAS
tRCD tCCD
/CAS /WE CKE DQM A0-9 A10 A11
X
X
Y
Y
Y
Y
Y
X
X
X
X
BA0,1
0
1
0
0
0
1
0
CL=3
DQ
D0
D0
D0
D0
D0
D0
D1
D1
Q0
Q0
Q0
Q0
ACT#0
WRITE#0 WRITE#0 WRITE#0 READ#0 ACT#1 WRITE#1
Burst Write can be interrupted by Write or Read of any active bank. Italic parameter indicates minimum case MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
26
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Read Interrupted by Read / Write BL=4,CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRRD
/RAS
tRCD
/CAS /WE CKE DQM
DQM read latency=2
A0-9 A10 A11
X
X
Y
Y
Y
Y
Y
Y
X
X
X
X
BA0,1
0
1
0
0
0
1
0
0
DQ
ACT#0
Q0
Q0
Q0
Q0
Q0
Q0
Q1
Q1
Q0
D0
D0
READ#0 READ#0 READ#0 READ#0 WRITE#0 ACT#1 READ#1 blank to prevent bus contention
Burst Read can be interrupted by Read or Write of any active bank. Italic parameter indicates minimum case MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
27
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Write Interrupted by Precharge BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRRD
/RAS
tRCD
/CAS /WE CKE DQM A0-9 A10 A11
X
X
Y
Y
X
Y
X
X
X
X
X
X
BA0,1
0
1
0
1
0
1
1
1
DQ
D0
D0
D0
D0
D1
D1
D1
D1
D1
ACT#0 WRITE#0 ACT#1
PRE#0 WRITE#1 PRE#1
ACT#1
WRITE#1
Burst Write is not interrupted by Precharge of the other bank.
Burst Write is interrupted by Precharge of the same bank. Italic parameter indicates minimum case
MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
28
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Read Interrupted by Precharge BL=4,CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRRD tRP
/RAS
tRCD tRCD
/CAS /WE CKE DQM
DQM read latency=2
A0-9 A10 A11
X
X
Y
Y
X
Y
X
X
X
X
X
X
BA0,1
0
1
0
1
0
1
1
1
DQ
ACT#0 READ#0 ACT#1
Q0
Q0
Q0
Q0
Q1
Q1
PRE#0 READ#1 PRE#1
ACT#1
READ#1
Burst Read is not interrupted by Precharge of the other bank.
Burst Read is interrupted by Precharge of the same bank. Italic parameter indicates minimum case
MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
29
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Mode Register Setting
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRC tRSC
/RAS
tRCD
/CAS /WE CKE DQM A0-9 A10 A11
M
X
Y
X
X
BA0,1
0
0
0
DQ
D0
D0
D0
D0
Auto-Ref (last of 8 cycles)
Mode ACT#0 WRITE#0 Register Setting Italic parameter indicates minimum case
MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
30
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Auto-Refresh BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRC
/RAS
tRCD
/CAS /WE CKE DQM A0-9 A10 A11
X
Y
X
X
BA0,1
0
0
DQ
D0
D0
D0
D0
Auto-Refresh Before Auto-Refresh, all banks must be idle state.
ACT#0
WRITE#0
After tRC from Auto-Refresh, all banks are idle state. Italic parameter indicates minimum case
MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
31
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Self-Refresh
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK
CLK can be stopped tRC+1
/CS /RAS /CAS /WE
tSRX
CKE
CKE must be low to maintain Self-Refresh
DQM A0-9 A10 A11
X
X
X
BA0,1
0
DQ
Self-Refresh Entry Before Self-Refresh Entry, all banks must be idle state.
Self-Refresh Exit
ACT#0
After tRC from Self-Refresh Exit, all banks are idle state. Italic parameter indicates minimum case
MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
32
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
DQM Write Mask
BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS /RAS
tRCD
/CAS /WE CKE DQM A0-9 A10 A11
X
Y
Y
Y
X
X
BA0,1
0
0
0
0
masked
masked
D0 D0 D0
DQ
D0
D0
D0
D0
ACT#0
WRITE#0
WRITE#0
WRITE#0
Italic parameter indicates minimum case MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
33
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
DQM Read Mask
BL=4, CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS /RAS
tRCD
/CAS /WE CKE
DQM read latency=2
DQM A0-9 A10 A11
X
Y
Y
Y
X
X
BA0,1
0
0
0
0
masked
masked
Q0 Q0 Q0
DQ
Q0
Q0
Q0
Q0
ACT#0
READ#0
READ#0
READ#0
Italic parameter indicates minimum case MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
34
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Power Down
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS /RAS /CAS /WE CKE DQM A0-9 A10 A11
Standby Power Down CKE latency=1 Active Power Down
X
X
X
BA0,1
0
DQ
Precharge All
ACT#0
Italic parameter indicates minimum case MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
35
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK Suspend
BL=4,CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS /RAS
tRCD
/CAS /WE CKE
CKE latency=1 CKE latency=1
DQM A0-9 A10 A11
X
Y
Y
X
X
BA0,1
0
0
0
DQ
D0
D0
D0
D0
Q0
Q0
Q0
Q0
ACT#0
WRITE#0 READ#0 CLK suspended
CLK suspended
Italic parameter indicates minimum case MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
36
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Serial Presence Detect Table I
Byte 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Function described # of Serial PD Bytes Written during Production Total # of Bytes in SPD device Fundamental memory type # Row Addresses on this assembly # Column Addresses on this assembly # Module Banks on this assembly Data Width of this assembly... ... Data Width continuation Voltage interface standard of this assembly
SDRAM Cycletime at Max. Supported CAS Latency (CL).
SPD enrty data 128 256 Bytes SDRAM A0-A11 A0-A8 1BANK x72 0 LVTTL 7.5ns
SPD DATA(hex) 80 08 04 0C 09 01 48 00 01 75 54 02 80 08 08 01 8F 04 04 01 01 00 0E 00
Cycle time for CL=3 SDRAM Access from Clock tAC for CL=3 DIMM Configuration type (Non-parity,Parity,ECC) Refresh Rate/Type SDRAM width,Primary DRAM Error Checking SDRAM data width
Minimum Clock Delay,Back to Back Random Column Addresses ECC
5.4ns
self refresh(15.625uS) x8 x8 1 1/2/4/8/Full page 4bank 3 0 0
unbuffered
Precharge All,Auto precharge Write1/Read Burst
Burst Lengths Supported # Banks on Each SDRAM device CAS# Latency CS# Latency Write Latency SDRAM Module Attributes SDRAM Device Attributes:General SDRAM Cycle time(2nd highest CAS latency) Cycle time for CL=2
N/A
24
SDRAM Access form Clock(2nd highest CAS latency)
tAC for CL=2 25 26 27 28 29 30 SDRAM Cycle time(3rd highest CAS latency)
SDRAM Access form Clock(3rd highest CAS latency)
N/A N/A N/A 23ns(22.5ns) 15ns 23ns(22.5ns) 45ns
00 00 00 17 0F 17 2D
Precharge to Active Minimum Row Active to Row Active Min. RAS to CAS Delay Min Active to Precharge Min
MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
37
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Serial Presence Detect Table II
31 32 33 34 35 36-61 62 63 64-71 72 Density of each bank on module Command and Address signal input setup time Command and Address signal input hold time Data signal input setup time Data signal input hold time Superset Information (may be used in future) SPD Revision Checksum for bytes 0-62 Manufactures Jedec ID code per JEP-108E Manufacturing location MITSUBISHI Miyoshi,Japan Tajima,Japan NC,USA 73-90 91-92 93-94 95-98 99-125 126 127 128+ Manufactures Part Number Revision Code Manufacturing date Assembly Serial Number Manufacture Specific Data Intetl specification frequency Intel specification CAS# Latency support Unused storage locations Germany MH8S72BALD-6 PCB revision year/week code serial number option CL=3,AP,CK0,2 open 64MByte 1.5ns 0.8ns 1.5ns 0.8ns option JEDEC2 10 15 08 15 08 00 02 A4 1CFFFFFFFFFFFFFF 01 02 03 04
4D483853373242414C442D36202020202020
rrrr yyww ssssssss 00 64 AD 00
MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
38
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
133.35 3
8.89 11.43
6.35 36.83 24.495 42.18
6.35 54.61 127.35
1.27
3
34.925
3.9Max
1.27
MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
39
MITSUBISHI LSIs
MH8S72BALD-6
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable,but there is always the possibility that trouble may occur with them. Trouble with semiconductors consideration to safety when making your circuit designs,with appropriate measures such as (i) placement of substitutive,auxiliary circuits,(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1.These materials are intended as a ref erence to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application;they do not conv ey any license under any intellectual property rights,or any other rights,belonging to Mitsubishi Electric Corporation or a third party . 2.Mitsubishi Electric Corporation assumes no responsibility f or any damage, or inf ringement of any thirdparty 's rights,originating in the use of any product data,diagrams,charts or circuit application examples contained in these materials. 3.All inf ormation contained in these materials,including product data, diagrams and charts,represent inf ormation on products at the time of publication of these materials,and are subject to change by Mitsubishi Electric Corporation without notice due to product improv ements or other reasons. It is theref ore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubish Semiconductor product distributor f or the latest product inf ormation bef ore purchasing a product listed herein. 4.Mitsubishi Electric Corporation semiconductors are not designed or manuf actured f or use in a dev ice or system that is used under circumstances in which human lif e is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein f or special applications,such as apparatus or systems for transportation, v ehicular,medical,aerospace,nuclear,or undersea repeater use. 5.The prior written approv al of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. 6.If t hese products or technologies are subject the Japanese export control restrictions,they must be exported under a license f rom the Japanese gov ernment and cannot be imported into a country other than the approv ed destination. Any div ersion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 7.Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor f or f urther details on these materials or the products contained therein.
MIT-DS-0316-0.0
MITSUBISHI ELECTRIC
11/May. /1999
40

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